Keyword : high-electron mobility transistor

Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect
Victor RYZHII Akira SATOU Michael S. SHUR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1012-1019
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
heterostructurehigh-electron mobility transistorplasma oscillationsplasma instabilitytransit-time effectterahertz radiation
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Hydrogen Degradation of InP HEMTs and GaAs PHEMTs
Jesus A. del ALAMO Roxann R. BLANCHARD Samuel D. MERTENS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1289-1293
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
high-electron mobility transistorhydrogenreliabilityInPGaAs
 Summary | Full Text:PDF(606.9KB)