Keyword : high breakdown voltage


InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA Yasuhiro NAKASHA Toshihide KIKKAWA Kazukiyo JOSHIN Yuu WATANABE Hitoshi TANAKA Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1294-1299
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaP-channel FEThigh breakdown voltagehigh operating voltagelow distortion
 Summary | Full Text:PDF(603KB)

200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12 ; pp. 1961-1967
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltageCMOS transistorelectric field relaxationSOIintrinsic layer
 Summary | Full Text:PDF(2.5MB)

Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 746-750
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FEThigh breakdown voltageburied gate
 Summary | Full Text:PDF(474.3KB)