IEICE Trans

Keyword : heterostructure

X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI Masao SAKURABA Junichi MUROTA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 ; pp. 680-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: silicon germanium, heterostructure, chemical bonding features, valence band alignment, X-ray photoelectron spectroscopy,
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High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility Jungwoo OH Jeff HUANG Injo OK Se-Hoon LEE Paul D. KIRSCH Raj JAMMY Hi-Deok LEE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 712-716 Type of Manuscript: INVITED PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: high transport, SiGe, orientation, strain, heterostructure,
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Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer Mitsuhiro HANABE Yahya Moubarak MEZIANI Taiichi OTSUJI Eiichi SANO Tanemasa ASANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 ; pp. 949-954 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: terahertz, plasmon resonance, plasma instability, heterostructure, high-electron-mobility transistor (HEMT),
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Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress Hideki HASEGAWA Seiya KASAI Taketomo SATO Tamotsu HASHIZUME
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 874-882 Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: Keyword: heterostructure, III-V semiconductors, nanotechnology, high speed devices, sensors, smart chips,
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Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect Victor RYZHII Akira SATOU Michael S. SHUR
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-C No. 7 ; pp. 1012-1019 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: THz Devices Keyword: heterostructure, high-electron mobility transistor, plasma oscillations, plasma instability, transit-time effect, terahertz radiation,
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Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors Koichi IIYAMA Junya ASHIDA Akira TAKEMOTO Saburo TAKAMIYA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/11/01 Vol. E86-C No. 11 ; pp. 2278-2282 Type of Manuscript: PAPER Category: Lasers, Quantum Electronics Keyword: metal-semiconductor-metal photodetector, heterostructure, S parameter, equivalent circuit,
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Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE Makoto MIYOSHI Masahiro SAKAI Hiroyasu ISHIKAWA Takashi EGAWA Takashi JIMBO Mitsuhiro TANAKA Osamu ODA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2077-2081 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN, heterostructure, MOVPE, uniformity, bowing,
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TCAD Challenges for Heterostructure Microelectronics Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1960-1967 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: TCAD, heterostructure, device simulation,
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Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition Masaya ICHIMURA Yukihisa MORIGUCHI Akira USAMI Takao WADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 ; pp. 1056-1062 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: Raman spectroscopy, heterostructure, Ge/Si, interdiffusion, lattice-mismatch,
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