Keyword : heterojunction bipolar transistor


High Efficiency Class-E and Compact Doherty Power Amplifiers with Novel Harmonics Termination for Handset Applications
Tsuyoshi SUGIURA Satoshi FURUTA Tadamasa MURAKAMI Koki TANJI Norihisa OTANI Toshihiko YOSHIMASU 
Publication:   
Publication Date: 2019/10/01
Vol. E102-C  No. 10 ; pp. 699-706
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
power amplifierheterojunction bipolar transistormobile communication
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Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1323-1326
Type of Manuscript:  BRIEF PAPER
Category: III-V High-Speed Devices and Circuits
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancetransferred-substrateheterogeneous integration
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Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Naoaki TAKEBE Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 917-920
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancein situ etching
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Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
Naoaki TAKEBE Takashi KOBAYASHI Hiroyuki SUZUKI Yasuyuki MIYAMOTO Kazuhito FURUYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 830-834
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistorInPMOCVDCBr4
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Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation
Kazuhiro MOCHIZUKI Ken-ichi TANAKA Takashi SHIOTA Takafumi TANIGUCHI Hiroyuki UCHIYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 943-948
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
heterojunction bipolar transistorreliabilityrapid thermal annealingGaAsInGaP
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High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation
Kun-Ming CHEN Guo-Wei HUANG Li-Hsin CHANG Hua-Chou TSENG Tsun-Lai HSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 720-725
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
high-frequencySiGeheterojunction bipolar transistorpulsed measurementself-heating effect
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Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications
Jong-In SONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/01/25
Vol. E83-C  No. 1 ; pp. 115-121
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
chemical beam epitaxycarbon dopingheterojunction bipolar transistormillimeter-wave transistor
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A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT
Kazutomi MORI Kenichiro CHOUMEI Teruyuki SHIMURA Tadashi TAKAGI Yukio IKEDA Osami ISHIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1913-1920
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
microwaveamplifierefficiencylayoutheterojunction bipolar transistormultifinger
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Low-Noise, Low-Power Wireless Frontend MMICs Using SiGe HBTs
Hermann SCHUMACHER Uwe ERBEN Wolfgang DURR Kai-Boris SCHAD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11 ; pp. 1943-1950
Type of Manuscript:  INVITED PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
Silicon-Germaniumwirelessreceiversheterojunction bipolar transistormicrowave circuitselectronic noise
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Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones
Kazukiyo JOSHIN Yasuhiro NAKASHA Taisuke IWAI Takumi MIYASHITA Shiro OHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5 ; pp. 725-729
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
heterojunction bipolar transistorintermodulationharmonicsW-CDMA
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AlGaAs/GaAs HBT ICs for 20-Gb/s Optical Transmission Systems
Nobuo NAGANO Masaaki SODA Hiroshi TEZUKA Tetsuyuki SUZAKI Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 465-474
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
heterojunction bipolar transistoroptical transmissionpreamplifieroptical modulator driverclock extraction
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AlGaAs/InGaAs HBT IC Modules for 40-Gb/s Optical Receiver
Risato OHHIRA Yasushi AMAMIYA Takaki NIWA Nobuo NAGANO Takeshi TAKEUCHI Chiharu KURIOKA Tomohiro CHUZENJI Kiyoshi FUKUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 448-455
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
heterojunction bipolar transistorpreamplifieroptical frontenddistributed amplifieroptical receiver
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High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones
Teruyuki SHIMURA Takeshi MIURA Yutaka UNEME Hirofumi NAKANO Ryo HATTORI Mutsuyuki OTSUBO Kazutomi MORI Akira INOUE Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 740-745
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction bipolar transistordigital cellular phoneindividual thermal shuntemitter air-bridgebias mode
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1616 Two-Dimensional Optoelectronic Integrated Receiver Array for Highly Parallel Interprocessor Networks
Hiroshi YANO Sosaku SAWADA Kentaro DOGUCHI Takashi KATO Goro SASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 689-694
Type of Manuscript:  Special Section PAPER (Special Issue on Photonic Integrated Circuits)
Category: Optoelectronic Integrated Receivers
Keyword: 
optoelectronic integrated circuitpin photodiodeheterojunction bipolar transistortwo-dimensional receiver arrayoptical switchinginterprocessor network
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High-Performance Small-Scale Collector-Up AlGaAs/GaAs HBT's with a Carbon-Doped Base Fabricated Using Oxygen-Ion Implantation
Shoji YAMAHATA Yutaka MATSUOKA Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1437-1443
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
Category: 
Keyword: 
heterojunction bipolar transistorcollector-up structurecarbon-doped baseoxygen-ion implantationmaximum oscillation frequency
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Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology
Takumi NITTONO Koichi NAGATA Yoshiki YAMAUCHI Takashi MAKIMURA Hiroshi ITO Osaake NAKAJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1455-1463
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
heterojunction bipolar transistorself-aligned structureoxygen-ion implantationzinc diffusioncarbon doping
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IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs
Yutaka MATSUOKA Shoji YAMAHATA Satoshi YAMAGUCHI Koichi MURATA Eiichi SANO Tadao ISHIBASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1392-1401
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
heterojunction bipolar transistorself-aligned structureballistic collection transistorlaunchercutoff frequencymaximum oscillation frequencymultiplexerpreamplifierselectorfrequency divider
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