IEICE Trans

Keyword : heterojunction FET

1.0 V Operation Power Heterojunction FET for Digital Cellular Phones Takehiko KATO Yasunori BITO Naotaka IWATA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/02/01 Vol. E84-C No. 2 ; pp. 249-252 Type of Manuscript: PAPER Category: Microwaves, Millimeter-Waves Keyword: power amplifier, heterojunction FET, low voltage operation, on-resistance,
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Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain Kohji MATSUNAGA Yasuhiro OKAMOTO Mikio KANAMORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/05/25 Vol. E82-C No. 5 ; pp. 744-749 Type of Manuscript: Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits) Category: Keyword: power amplifier, intermodulation distortion, heterojunction FET, linearizer,
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0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs Shigeki WADA Masatoshi TOKUSHIMA Masaoki ISHIKAWA Nobuhide YOSHIDA Masahiro FUJII Tadashi MAEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 ; pp. 491-497 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Compound Semiconductor Devices Keyword: GaAs, heterojunction FET, Y-shaped gate, DCFL, low supply voltage,
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Single 1. 5 V Operation Power Amplifier MMIC with SrTiO₃ Capacitors for 2. 4 GHz Wireless Applications Takeshi B. NISHIMURA Naotaka IWATA Keiko YAMAGUCHI Masatoshi TOMITA Yasunori BITO Koichi TAKEMURA Yoichi MIYASAKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/06/25 Vol. E81-C No. 6 ; pp. 898-903 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Semiconductor Devices and Amplifiers Keyword: wireless LAN, MMIC, power amplifier, heterojunction FET, SrTiO₃, low voltage, single voltage supply,
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Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 ; pp. 746-750 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices) Category: Keyword: heterojunction FET, high breakdown voltage, buried gate,
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A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/04/25 Vol. E79-C No. 4 ; pp. 512-517 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs) Category: Keyword: low power, high speed, GaAs, heterojunction FET, SCFL, logic swing, low supply voltage, D-FF,
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Power Heterojunction FETs for Low-Voltage Digital Cellular Applications Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/09/25 Vol. E78-C No. 9 ; pp. 1241-1245 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices) Category: Keyword: heterojunction FET, power device, low-voltage operation, power-added efficiency, personal digital cellular, adjacent channel leakage power,
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Novel Channel Structures for High Frequency InP-Based HTEFs Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/25 Vol. E76-C No. 9 ; pp. 1402-1411 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: InGaAs, InAs, InAlAs, InP, current gain cutoff frequency, delay times, heterojunction FET, quantum well, real-space transfer,
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