Keyword : heterojunction FET


1.0 V Operation Power Heterojunction FET for Digital Cellular Phones
Takehiko KATO Yasunori BITO Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2 ; pp. 249-252
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
power amplifierheterojunction FETlow voltage operationon-resistance
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Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain
Kohji MATSUNAGA Yasuhiro OKAMOTO Mikio KANAMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5 ; pp. 744-749
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
power amplifierintermodulation distortionheterojunction FETlinearizer
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0.21-fJ GaAs DCFL Circuits Using 0.2-µm Y-Shaped Gate AlGaAs/InGaAs E/D-HJFETs
Shigeki WADA Masatoshi TOKUSHIMA Masaoki ISHIKAWA Nobuhide YOSHIDA Masahiro FUJII Tadashi MAEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 491-497
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Compound Semiconductor Devices
Keyword: 
GaAsheterojunction FETY-shaped gateDCFLlow supply voltage
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Single 1. 5 V Operation Power Amplifier MMIC with SrTiO3 Capacitors for 2. 4 GHz Wireless Applications
Takeshi B. NISHIMURA Naotaka IWATA Keiko YAMAGUCHI Masatoshi TOMITA Yasunori BITO Koichi TAKEMURA Yoichi MIYASAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6 ; pp. 898-903
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
wireless LANMMICpower amplifierheterojunction FETSrTiO3low voltagesingle voltage supply
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Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications
Yasuhiro OKAMOTO Kohji MATSUNAGA Mikio KANAMORI Masaaki KUZUHARA Yoichiro TAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 746-750
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FEThigh breakdown voltageburied gate
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A 1.3 V Supply Voltage AlGaAs/InGaAs HJFET SCFL D-FF Operating at up to 10 Gbps
Masahiro FUJII Tadashi MAEDA Yasuo OHNO Masatoshi TOKUSHIMA Masaoki ISHIKAWA Muneo FUKAISHI Hikaru HIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 512-517
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
low powerhigh speedGaAsheterojunction FETSCFLlogic swinglow supply voltageD-FF
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Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO Naotaka IWATA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1241-1245
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
heterojunction FETpower devicelow-voltage operationpower-added efficiencypersonal digital cellularadjacent channel leakage power
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Novel Channel Structures for High Frequency InP-Based HTEFs
Takatomo ENOKI Kunihiro ARAI Tatsushi AKAZAKI Yasunobu ISHII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1402-1411
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
InGaAsInAsInAlAsInPcurrent gain cutoff frequencydelay timesheterojunction FETquantum wellreal-space transfer
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