Keyword : grain size


Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET
Yasutaka MAEDA Shun-ichiro OHMI Tetsuya GOTO Tadahiro OHMI 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 463-467
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneN-doped LaB6OFETsubthreshold swingaging characteristicgrain size
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 885-890
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneOFETshigh-kgrain sizeHfON
 Summary | Full Text:PDF

Control of Magnetic Properties and Microstructure of Thin Film Recording Media under Ultraclean Sputtering Process
Takehito SHIMATSU Migaku TAKAHASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/11/25
Vol. E78-C  No. 11 ; pp. 1550-1556
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra High Density Information Storage Technologies)
Category: 
Keyword: 
Ultraclean sputtering processcoercive forceintergranular couplinggrain boundarygrain sizemedia noise
 Summary | Full Text:PDF