Keyword : graded base


Ultrahigh-Speed InP/InGaAs DHBTs with Very High Current Density
Minoru IDA Kenji KURISHIMA Noriyuki WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1923-1928
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
heterojunction bipolar transistor (HBT)indium phosphidegraded base
 Summary | Full Text:PDF

Aluminum-Graded-Base PNp AlGaAs/GaAs Heterojunction Transistor with 37 GHz Cut-Off Frequency
Atsushi KAMEYAMA Alan MASSENGALE Changhong DAI James S. HARRIS, Jr. 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4 ; pp. 518-523
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
HBTPnpAlGaAs/GaAscomplementary circuitgraded base
 Summary | Full Text:PDF

Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
Kenji KURISHIMA Hiroki NAKAJIMA Shoji YAMAHATA Takashi KOBAYASHI Yutaka MATSUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1171-1181
Type of Manuscript:  INVITED PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
HBTMOVPEZn diffusionabrupt emittergraded basehot electron injectionnonequilibrium transportcurrent blocking effectlateral down-scalingemitter size effect
 Summary | Full Text:PDF