Keyword : gate oxide


Electrical Properties of Ba0.5Sr0.5Ta2O6 Thin Film Fabricated by Sol-Gel Method
Li LU Masahiro ECHIZEN Takashi NISHIDA Kiyoshi UCHIYAMA Yukiharu URAOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10 ; pp. 1511-1515
Type of Manuscript:  Special Section PAPER (Special Section on Frontier of Thin-Film Transistor Technology)
Category: 
Keyword: 
Ba0.5Sr0.5Ta2O6gate oxidedielectric constantleakage current
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High-κ Dielectric Layers for Bioelectronic Applications
Dirk BORSTLAP Jurgen SCHUBERT Willi ZANDER Andreas OFFENHAUSSER Sven INGEBRANDT 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/12/01
Vol. E91-C  No. 12 ; pp. 1894-1898
Type of Manuscript:  INVITED PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
Category: 
Keyword: 
field-effect transistorsgate oxidebioelectronicsgate capacitancegate leakage
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A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors
Satoshi IKEDA Hidetsugu UCHIDA Norio HIRASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1134-1137
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOS capacitorgate oxideOBICbreakdown spotXTEM
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Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs
Eric CASSAN Sylvie GALDIN Philippe DOLLFUS Patrice HESTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1194-1202
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
MOSFETsdownsizinggate oxidedirect-tunnelinghot carriersmodeling
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Evaluation of Plasma Damage to Gate Oxide
Yukiharu URAOKA Koji ERIGUCHI Tokuhiko TAMAKI Kazuhiko TSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 453-458
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
QBDgate oxideplasmareliabilitydamagephoton emissionLOCOSthinning
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A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method
Yukiharu URAOKA Kazuhiko TSUJI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 519-524
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
reliabilityphoton emissionTDDBgate oxideLOCOS
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Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor
Makoto AKIZUKI Masaki HIRASE Atsushi SAITA Hiroyuki AOE Atsumasa DOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 1007-1012
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
MOS capacitorspolycystalline siliconamorphous siliconstressin-situ dopinggate oxideconstant current stressdielectric breakdowntrapped charge
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