Keyword : gate leakage current


Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
Keita MATSUDA Takeshi KAWASAKI Ken NAKATA Takeshi IGARASHI Seiji YAEGASSI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1015-1019
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
ITOSchottky gatetunnelAlGaN/GaN HEMTgate leakage current
 Summary | Full Text:PDF(511KB)

Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFEThigh-κ gate dielectricHfO2atomic layer depositionlong purgeimpuritygate leakage current
 Summary | Full Text:PDF(1.1MB)

High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors
Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2051-2057
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
Cu-gateAlGaN/GaNhigh electron mobility transistorgate leakage currenthigh-temperature stability
 Summary | Full Text:PDF(859KB)

A 100 nm Node CMOS Technology for System-on-a-Chip Applications
Kiyotaka IMAI Atsuki ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1057-1063
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
CMOSthreshold voltagegate leakage currentoxynitride
 Summary | Full Text:PDF(1.1MB)