Keyword : gate leakage current

Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
Keita MATSUDA Takeshi KAWASAKI Ken NAKATA Takeshi IGARASHI Seiji YAEGASSI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1015-1019
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
ITO, Schottky gate, tunnel, AlGaN/GaN HEMT, gate leakage current, 
 Summary | Full Text:PDF
Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFET, high-κ gate dielectric, HfO2, atomic layer deposition, long purge, impurity, gate leakage current, 
 Summary | Full Text:PDF
High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors
Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2051-2057
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
Cu-gate, AlGaN/GaN, high electron mobility transistor, gate leakage current, high-temperature stability, 
 Summary | Full Text:PDF
A 100 nm Node CMOS Technology for System-on-a-Chip Applications
Kiyotaka IMAI Atsuki ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1057-1063
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
CMOS, threshold voltage, gate leakage current, oxynitride, 
 Summary | Full Text:PDF