Keyword : field-effect transistors

High-κ Dielectric Layers for Bioelectronic Applications
Dirk BORSTLAP Jurgen SCHUBERT Willi ZANDER Andreas OFFENHAUSSER Sven INGEBRANDT 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/12/01
Vol. E91-C  No. 12 ; pp. 1894-1898
Type of Manuscript:  INVITED PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
Category: 
Keyword: 
field-effect transistors, gate oxide, bioelectronics, gate capacitance, gate leakage, 
 Summary | Full Text:PDF(363.8KB)
RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
Makoto KASU Kenji UEDA Hiroyuki KAGESHIMA Yoshiharu YAMAUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1042-1049
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Wide Bandgap Devices
Keyword: 
diamond, field-effect transistors, RF characteristics, equivalent circuit, hydrogen-surface termination, 
 Summary | Full Text:PDF(1.2MB)