Keyword : ferroelectric memory


A High-Endurance Read/Write Scheme for Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Hiroki FUJISAWA Takeshi SAKATA Tomonori SEKIGUCHI Kazuyoshi TORII Katsutaka KIMURA Kazuhiko KAJIGAYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 763-770
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
DRAMferroelectric memoryhigh speedlow-powerhigh-endurance
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Structural Defects in Sr0. 7Bi2. 3Ta2O9 Thin Film for Ferroelectric Memory
Tetsuya OSAKA Sachiko ONO Akira SAKAKIBARA Ichiro KOIWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 545-551
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric memorystructural defectsSr0.7Bi2.3Ta2O9 thin filmTEM observationchemical liquid deposition
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Crystallization Process of Sr0. 7Bi2. 3Ta2O9 Thin Films with Different Crystal Orientation Prepared by Chemical Liquid Deposition Using Alkoxide Precursor
Ichiro KOIWA Takao KANEHARA Juro MITA Tetsuya OSAKA Sachiko ONO Akira SAKAKIBARA Tomonori SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 552-559
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric memorySrBi2Ta2O9 thin filmcrystallization processalkoxide precursor
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Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution
Ichiro KOIWA Yukihisa OKADA Juro MITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 590-594
Type of Manuscript:  Special Section LETTER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric memorySrBi2Ta2O9 thin filmmisted deposition methodalkoxide solution
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Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Kan TAKEUCHI Katsumi MATSUNO Yoshinobu NAKAGOME Masakazu AOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2 ; pp. 234-242
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
ferroelectric memoryDRAMhalf-V cc platenonvolatile memory
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