Keyword : enhancement mode


1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET
Fumio HARIMA Yasunori BITO Hidemasa TAKAHASHI Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1104-1108
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
Keyword: 
enhancement modehetero-junction FETspower amplifiers
 Summary | Full Text:PDF

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
enhancement modeAlGaN/GaNHEMTfluorideplasma treatmentthreshold voltage
 Summary | Full Text:PDF