Keyword : electromigration


Wire Planning for Electromigration and Interference Avoidance in Analog Circuits
Hsin-Hsiung HUANG Jui-Hung HUNG Cheng-Chiang LIN Tsai-Ming HSIEH 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2011/11/01
Vol. E94-A  No. 11 ; pp. 2402-2411
Type of Manuscript:  PAPER
Category: VLSI Design Technology and CAD
Keyword: 
analog circuitswire planning with obstacleselectromigrationinterferenceinteger linear programming
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An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
Hajdin CERIC Siegfried SELBERHERR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 421-426
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
electromigrationdiffuse interface modelgrid adaptationvoid evolutionfinite element method
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Electromigration and Diffusion of Gold in GaAs IC Interconnections
Akira OHTA Kotaro YAJIMA Norio HIGASHISAKA Tetsuya HEIMA Takayuki HISAKA Ryo HATTORI Yoshikazu NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/11/01
Vol. E85-C  No. 11 ; pp. 1932-1939
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
electromigrationdiffusionGaAs IChigh temperaturehigh current density
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Via Electromigration Characteristics in Aluminum Based Multilevel Interconnection
Takahisa YAMAHA Masaru NAITO Tadahiko HOTTA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Vol. E77-A  No. 1 ; pp. 187-194
Type of Manuscript:  Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword: 
reliabilityelectromigrationmetallizationvia contactmultilevel interconnectionlaminated interconnectionsaluminum
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Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects
Takahisa NITTA Tadahiro OHMI Tsukasa HOSHI Toshiyuki TAKEWAKI Tadashi SHIBATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 626-634
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
copper interconnectsgiant-grainelectromigrationlow-kinetic-energy ion bombardment process
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