Keyword : dual gate CMOS


High-Density Full-CMOS SRAM Cell Technology with a Deep Sub-Micron Spacing between nMOS and pMOSFET
Fumitomo MATSUOKA Kazunari ISHIMARU Hiroshi GOJOHBORI Hidetoshi KOIKE Yukari UNNO Manabu SAI Toshiyuki KONDO Ryuji ICHIKAWA Masakazu KAKUMU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1385-1394
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: General Technology
Keyword: 
full-CMOS SRAM cellshallow trench isolationdual gate CMOS
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