Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C
No. 3 ;
pp. 526-530
Type of Manuscript:
Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword:
bipolar transistor, SiGe HBT, doping level inversion, cutoff frequency, selective epitaxy, |