Keyword : dopant pile-up


A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 453-458
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF(1.5MB)

A Simplified Dopant Pile-Up Model for Process Simulators
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 2117-2122
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF(1.1MB)

Ultra-Shallow Junction Formation with Antimony Implantation
Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1091-1097
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
shallow junctionantimonydopant lossdopant pile-upsheet resistance
 Summary | Full Text:PDF(714.3KB)

A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/09/01
Vol. E84-C  No. 9 ; pp. 1234-1239
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF(756.1KB)