Keyword : disturb


A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme
Shusuke YOSHIMOTO Masaharu TERADA Shunsuke OKUMURA Toshikazu SUZUKI Shinji MIYANO Hiroshi KAWAGUCHI Masahiko YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4 ; pp. 572-578
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
SRAM8Tlow energydisturbhalf selectwrite back
 Summary | Full Text:PDF

A Differential Cell Terminal Biasing Scheme Enabling a Stable Write Operation against a Large Random Threshold Voltage (Vth) Variation
Hiroyuki YAMAUCHI Toshikazu SUZUKI Yoshinobu YAMAGAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/11/01
Vol. E89-C  No. 11 ; pp. 1526-1534
Type of Manuscript:  Special Section PAPER (Special Section on Novel Device Architectures and System Integration Technologies)
Category: 
Keyword: 
SRAMcell terminal biasingdifferential cell terminalSNMwrite margindisturb
 Summary | Full Text:PDF