Keyword : disturb/write margin


Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor
Kousuke MIYAJI Kentaro HONDA Shuhei TANAKAMARU Shinji MIYANO Ken TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/04/01
Vol. E95-C  No. 4 ; pp. 564-571
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
6T/8T-SRAMasymmetric pass gate transistorlocal electron injectiondisturb/write marginread speed
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