Keyword : dielectric reliability


Thickness Dependence of Furnace N2O-Oxynitridation Effects on Breakdown of Thermal Oxides
Toshimasa MATSUOKA Shigenari TAGUCHI Kenji TANIGUCHI Chihiro HAMAGUCHI Seizo KAKIMOTO Junkou TAKAGI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 248-254
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
N2O-oxynitridationcharge-to-breakdownthin dielectricsMOS structuredielectric reliability
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A Comparative Study of High-Field Endurance for NH3-Nitrided and N2O-Oxynitrided Ultrathin SiO2 Films
Hisashi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 511-518
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
thin dielectricsnitridationrapid thermal processingMOS structuredielectric reliabilitySiO2/Si interface
 Summary | Full Text:PDF