IEICE Trans

Keyword : dielectric breakdown

Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process Jung-Sheng CHEN Ming-Dou KER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/03/01 Vol. E91-C No. 3 ; pp. 378-384 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: gate-oxide reliability, sample-and-hold amplifier, dielectric breakdown, bootstrapped switch, switched-capacitor circuit,
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Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO₃ Thin Films Prepared by Liquid Source Chemical Vapor Deposition Tsuyoshi HORIKAWA Junji TANIMURA Takaaki KAWAHARA Mikio YAMAMUKA Masayoshi TARUTANI Kouichi ONO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/25 Vol. E81-C No. 4 ; pp. 497-504 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: chemical vapor deposition, (Ba,Sr)TiO₃, annealing, dielectric constant, dielectric breakdown,
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Elimination of Negative Charge-Up during High Current Ion Implantation Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-C No. 3 ; pp. 459-463 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: ion implantation, charge-up, electron shower, oxide, dielectric breakdown,
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Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors Makoto TAKIYAMA Susumu OHTSUKA Tadashi SAKON Masaharu TACHIMORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-C No. 3 ; pp. 464-472 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: silicon dioxide, dielectric breakdown, metal contamination, magnesium, zinc,
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Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning Yasuhisa SATO Rinshi SUGINO Masaki OKUNO Toshiro NAKANISHI Takashi ITO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/01/25 Vol. E76-C No. 1 ; pp. 41-46 Type of Manuscript: Special Section PAPER (Special Issue on Opto-Electronics and LSI) Category: Opto-Electronics Technology for LSIs Keyword: dry cleaning, dielectric breakdown, Fowler-Nordheim leakage current, junction leakage current, metal contamination,
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Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor Makoto AKIZUKI Masaki HIRASE Atsushi SAITA Hiroyuki AOE Atsumasa DOI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 ; pp. 1007-1012 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: MOS capacitors, polycystalline silicon, amorphous silicon, stress, in-situ doping, gate oxide, constant current stress, dielectric breakdown, trapped charge,
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