Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process Jung-Sheng CHENMing-Dou KER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1998/04/25 Vol. E81-CNo. 4 ;
pp. 497-504 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: chemical vapor deposition, (Ba,Sr)TiO3, annealing, dielectric constant, dielectric breakdown,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-CNo. 3 ;
pp. 459-463 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: ion implantation, charge-up, electron shower, oxide, dielectric breakdown,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-CNo. 3 ;
pp. 464-472 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: silicon dioxide, dielectric breakdown, metal contamination, magnesium, zinc,