IEICE Trans

Keyword : device simulation

Simulation-Based Understanding of “Charge-Sharing Phenomenon” Induced by Heavy-Ion Incident on a 65nm Bulk CMOS Memory Circuit Akifumi MARU Akifumi MATSUDA Satoshi KUBOYAMA Mamoru YOSHIMOTO
Publication: Publication Date: 2022/01/01 Vol. E105-C No. 1 ; pp. 47-50 Type of Manuscript: BRIEF PAPER Category: Electronic Circuits Keyword: single event upset, charge sharing, device simulation, 65 nm bulk CMOS memory,
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Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters Kentaro KOJIMA Kodai YAMADA Jun FURUTA Kazutoshi KOBAYASHI
Publication: Publication Date: 2020/04/01 Vol. E103-C No. 4 ; pp. 144-152 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology) Category: Electronic Circuits Keyword: single event effect, soft error, heavy ion irradiation, FDSOI, flip flop, device simulation,
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Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel Naoki HARADA Shintaro SATO Naoki YOKOYAMA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/03/01 Vol. E98-C No. 3 ; pp. 283-286 Type of Manuscript: BRIEF PAPER Category: Semiconductor Materials and Devices Keyword: MOSFET, transition metal dichalcogenide, short-channel effects, device simulation, high-k dielectric,
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A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect Kuiyuan ZHANG Jun FURUTA Ryosuke YAMAMOTO Kazutoshi KOBAYASHI Hidetoshi ONODERA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/04/01 Vol. E96-C No. 4 ; pp. 511-517 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology) Category: Keyword: DMR, soft error, MCU, device simulation,
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Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device Sang-Gun LEE Hong-Seok CHOI Chang-Wook HAN Seok-Jong LEE Yoon-Heung TAK Byung-Chul AHN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/11/01 Vol. E95-C No. 11 ; pp. 1756-1760 Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays) Category: Keyword: OLED, fitting parameter, J-V characteristics, device simulation,
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Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 ; pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
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Two-Dimensional Simulation of Electric Field and Carrier Concentration of Low-Temperature N-Channel Poly-Si LDD TFTs Yukisato NOGAMI Toshifumi SATOH Hiroyuki TANGO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 ; pp. 983-987 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Junction Formation and TFT Reliability Keyword: n-channel poly-Si LDD TFT, device simulation, electric field distribution, carrier concentration distribution, hot-carrier degradation,
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Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 ; pp. 885-894 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: MOSFET, shot noise, high frequency noise, device simulation, sub-threshold current,
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Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/04/01 Vol. E90-C No. 4 ; pp. 842-847 Type of Manuscript: Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Device Keyword: FinFET, double gate, GIDL, device simulation, LSTP,
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Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure Daigo KIKUTA Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 ; pp. 683-689 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: device simulation, open-gated FET, AlGaN/GaN heterostructure, trap, surface state, interface state,
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Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 2039-2042 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: AlGaN/GaN HEMT, device simulation, cut-off frequency, drain breakdown voltage, impact ionization,
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TCAD Challenges for Heterostructure Microelectronics Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 ; pp. 1960-1967 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: TCAD, heterostructure, device simulation,
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On Density-Gradient Modeling of Tunneling through Insulators Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 379-384 Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: device simulation, density-gradient model, direct tunneling, gate leakage, resonant tunneling,
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Simulation of RF Noise in MOSFETs Using Different Transport Models Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 481-489 Type of Manuscript: PAPER Category: Device Modeling and Simulation Keyword: device simulation, RF noise, impedance field method, Langevin equation,
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Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator Tatsuya EZAKI Takeo IKEZAWA Akio NOTSU Katsuhiko TANAKA Masami HANE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 409-415 Type of Manuscript: INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: atomistic, fluctuation, process simulation, device simulation,
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Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model Andreas SCHENK Andreas WETTSTEIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/03/01 Vol. E86-C No. 3 ; pp. 385-390 Type of Manuscript: Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: device simulation, DGSOI MOSFET, channel mobility, quantum effects, Schrodinger-Poisson solver,
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A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary Katsuhiko TANAKA Akio NOTSU Akio FURUKAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-C No. 8 ; pp. 1343-1348 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Numerics Keyword: device simulation, mesh generation,
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RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation Scott ROY Sava KAYA Asen ASENOV John R. BARKER
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-C No. 8 ; pp. 1224-1227 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Device Modeling and Simulation Keyword: device simulation, Monte Carlo, MOSFETs, RF,
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Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis Yuji TAKAHASHI Kazuaki KUNIHIRO Yasuo OHNO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 917-923 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: device simulation, cyclic bias simulator, pulse pattern effect, deep level, GaAs HJFET,
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Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State Hirobumi KAWASHIMA Ryo DANG (or DAN)
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 894-899 Type of Manuscript: Special Section PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: device simulation, non-isothermal, Si MOSFET, transient state, breakdown,
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Large Signal Analysis of RF Circuits in Device Simulation Zhiping YU Robert W. DUTTON Boris TROYANOSKY Junko SATO-IWANAGA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 908-916 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: device simulation, RF, large signal, distortion analysis, harmonic balance,
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TCAD--Yesterday, Today and Tomorrow Robert W. DUTTON
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/06/25 Vol. E82-C No. 6 ; pp. 791-799 Type of Manuscript: INVITED PAPER (Special Issue on TCAD for Semiconductor Industries) Category: Keyword: TCAD, device simulation, process simulation, IC technology, diffusion, ion implantation, oxidation, MOS scaling, modeling, hierarchy, atomic-scale phenomena,
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Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence Hirobumi KAWASHIMA Ryo DANG
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1997/10/25 Vol. E80-A No. 10 ; pp. 1973-1978 Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms) Category: Keyword: device simulation, non-isothermal, heat flow, self-heating, Si MOSFET, negative resistance,
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Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects Rimon IKENO Hiroshi ITO Kunihiro ASADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/06/25 Vol. E80-C No. 6 ; pp. 806-811 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: SOI MOSFET, device simulation, subthreshold characteristics, quantum mechanical effects, parameter fitting, substrate bias,
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A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account Koichi FUKUDA Kenji NISHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/03/25 Vol. E78-C No. 3 ; pp. 281-287 Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies) Category: Keyword: device simulation, mobility, carrier screening, impurity scattering, MOSFET,
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Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's Ken-ichiro SONODA Mitsuru YAMAJI Kenji TANIGUCHI Chihiro HAMAGUCHI Tatsuya KUNIKIYO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/03/25 Vol. E78-C No. 3 ; pp. 274-280 Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies) Category: Keyword: nonlocal impact ionization, substrate current, Monte Carlo simulation, device simulation, drift-diffusion model,
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Comparison between a posteriori Error Indicators for Adaptive Mesh Generation in Semiconductor Device Simulation Katsuhiko TANAKA Paolo CIAMPOLINI Anna PIERANTONI Giorgio BACCARANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-C No. 2 ; pp. 214-219 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Numerics Keyword: device simulation, mesh generation, error indicators,
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A Unified Model for the Simulation of Small-Geometry Devices Anna PIERANTONI Paolo CIAMPOLINI Andrea LIUZZO Giorgio BACCARANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-C No. 2 ; pp. 139-147 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Device Modeling Keyword: TCAD, device simulation, hot-electron effects, electro-thermal effects,
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Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation Sumiko OSHIDA Masao TAGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/11/25 Vol. E76-C No. 11 ; pp. 1604-1610 Type of Manuscript: Special Section PAPER (Special Issue on LSI Memories) Category: DRAM Keyword: soft error, device simulation, 256 M-bit DRAM,
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Two-Dimensional Device Simulation of 0.1 µm Thin-Film SOI MOSFET's Hans-Oliver JOACHIM Yasuo YAMAGUCHI Kiyoshi ISHIKAWA Norihiko KOTANI Tadashi NISHIMURA Katsuhiro TSUKAMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/25 Vol. E75-C No. 12 ; pp. 1498-1505 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: Deep Sub-micron SOI CMOS Keyword: thin-film SOI MOSFET's, miniaturized devices, device simulation,
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A Parallel Algorithm for Solving Two Dimensional Device Simulation by Direct Solution Method and Its Evaluation on the AP 1000 Kazuhiro MOTEGI Shigeyoshi WATANABE
Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Publication Date: 1992/07/25 Vol. E75-A No. 7 ; pp. 920-922 Type of Manuscript: Special Section LETTER (Special Section on the 1992 IEICE Spring Conference) Category: Keyword: parallel scheduling, parallel direct solution method, device simulation,
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General-Purpose Device Simulation System with an Effective Graphic Interface Masaaki TOMIZAWA Akira YOSHII Shunji SEKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 ; pp. 226-233 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: device simulation, graphic-interface, multi-windows, heterojunction-device,
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An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration Naoyuki SHIGYO Noritoshi KONISHI Hideki SATAKE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 ; pp. 156-160 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: bandgap narrowing, device simulation, bipolar device,
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Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs Anna PIERANTONI Paolo CIAMPOLINI Antonio GNUDI Giorgio BACCARANI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/02/25 Vol. E75-C No. 2 ; pp. 181-188 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from '91 VPAD) Category: Keyword: TCAD, device simulation, hot-electron effects, recessed-oxide MOSFETs,
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