Keyword : device simulation


Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
Naoki HARADA Shintaro SATO Naoki YOKOYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/03/01
Vol. E98-C  No. 3 ; pp. 283-286
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETtransition metal dichalcogenideshort-channel effectsdevice simulationhigh-k dielectric
 Summary | Full Text:PDF

A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect
Kuiyuan ZHANG Jun FURUTA Ryosuke YAMAMOTO Kazutoshi KOBAYASHI Hidetoshi ONODERA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/04/01
Vol. E96-C  No. 4 ; pp. 511-517
Type of Manuscript:  Special Section PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology)
Category: 
Keyword: 
DMRsoft errorMCUdevice simulation
 Summary | Full Text:PDF

Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device
Sang-Gun LEE Hong-Seok CHOI Chang-Wook HAN Seok-Jong LEE Yoon-Heung TAK Byung-Chul AHN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11 ; pp. 1756-1760
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
OLEDfitting parameterJ-V characteristicsdevice simulation
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Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
NANDflash memoryprogram inhibitionself-boostingFinFETdevice simulation
 Summary | Full Text:PDF

Two-Dimensional Simulation of Electric Field and Carrier Concentration of Low-Temperature N-Channel Poly-Si LDD TFTs
Yukisato NOGAMI Toshifumi SATOH Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5 ; pp. 983-987
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
n-channel poly-Si LDD TFTdevice simulationelectric field distributioncarrier concentration distributionhot-carrier degradation
 Summary | Full Text:PDF

Source/Drain Optimization of Double Gate FinFET Considering GIDL for Low Standby Power Devices
Katsuhiko TANAKA Kiyoshi TAKEUCHI Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 842-847
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Device
Keyword: 
FinFETdouble gateGIDLdevice simulationLSTP
 Summary | Full Text:PDF

Shot Noise Modeling in Metal-Oxide-Semiconductor Field Effect Transistors under Sub-Threshold Condition
Yoshioki ISOBE Kiyohito HARA Dondee NAVARRO Youichi TAKEDA Tatsuya EZAKI Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 885-894
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETshot noisehigh frequency noisedevice simulationsub-threshold current
 Summary | Full Text:PDF

Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure
Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 683-689
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
device simulationopen-gated FETAlGaN/GaN heterostructuretrapsurface stateinterface state
 Summary | Full Text:PDF

Two-Dimensional Device Simulation of 0.05 µm-Gate AlGaN/GaN HEMT
Yoshifumi KAWAKAMI Naohiro KUZE Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2039-2042
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaN HEMTdevice simulationcut-off frequencydrain breakdown voltageimpact ionization
 Summary | Full Text:PDF

TCAD Challenges for Heterostructure Microelectronics
Eugeny LYUMKIS Rimvydas MICKEVICIUS Oleg PENZIN Boris POLSKY Karim El SAYED Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1960-1967
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
TCADheterostructuredevice simulation
 Summary | Full Text:PDF

On Density-Gradient Modeling of Tunneling through Insulators
Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationdensity-gradient modeldirect tunnelinggate leakageresonant tunneling
 Summary | Full Text:PDF

Simulation of RF Noise in MOSFETs Using Different Transport Models
Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 481-489
Type of Manuscript:  PAPER
Category: Device Modeling and Simulation
Keyword: 
device simulationRF noiseimpedance field methodLangevin equation
 Summary | Full Text:PDF

Three Dimensional MOSFET Simulation for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
Tatsuya EZAKI Takeo IKEZAWA Akio NOTSU Katsuhiko TANAKA Masami HANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 409-415
Type of Manuscript:  INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
atomisticfluctuationprocess simulationdevice simulation
 Summary | Full Text:PDF

Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK Andreas WETTSTEIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 385-390
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationDGSOI MOSFETchannel mobilityquantum effectsSchrodinger-Poisson solver
 Summary | Full Text:PDF

RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation
Scott ROY Sava KAYA Asen ASENOV John R. BARKER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1224-1227
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
device simulationMonte CarloMOSFETsRF
 Summary | Full Text:PDF

A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary
Katsuhiko TANAKA Akio NOTSU Akio FURUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8 ; pp. 1343-1348
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Numerics
Keyword: 
device simulationmesh generation
 Summary | Full Text:PDF

Two-Dimensional Cyclic Bias Device Simulator and Its Application to GaAs HJFET Pulse Pattern Effect Analysis
Yuji TAKAHASHI Kazuaki KUNIHIRO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 917-923
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationcyclic bias simulatorpulse pattern effectdeep levelGaAs HJFET
 Summary | Full Text:PDF

Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State
Hirobumi KAWASHIMA Ryo DANG (or DAN) 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 894-899
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationnon-isothermalSi MOSFETtransient statebreakdown
 Summary | Full Text:PDF

Large Signal Analysis of RF Circuits in Device Simulation
Zhiping YU Robert W. DUTTON Boris TROYANOSKY Junko SATO-IWANAGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 908-916
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationRFlarge signaldistortion analysisharmonic balance
 Summary | Full Text:PDF

TCAD--Yesterday, Today and Tomorrow
Robert W. DUTTON 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 791-799
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
TCADdevice simulationprocess simulationIC technologydiffusionion implantationoxidationMOS scalingmodelinghierarchyatomic-scale phenomena
 Summary | Full Text:PDF

Non-isothermal Device Simulation Taking Account of Transistor Self-Heating and In-Chip Thermal Interdependence
Hirobumi KAWASHIMA Ryo DANG 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1997/10/25
Vol. E80-A  No. 10 ; pp. 1973-1978
Type of Manuscript:  Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: 
Keyword: 
device simulationnon-isothermalheat flowself-heatingSi MOSFETnegative resistance
 Summary | Full Text:PDF

Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects
Rimon IKENO Hiroshi ITO Kunihiro ASADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6 ; pp. 806-811
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SOI MOSFETdevice simulationsubthreshold characteristicsquantum mechanical effectsparameter fittingsubstrate bias
 Summary | Full Text:PDF

Nonlocal Impact Ionization Model and Its Application to Substrate Current Simulation of n-MOSFET's
Ken-ichiro SONODA Mitsuru YAMAJI Kenji TANIGUCHI Chihiro HAMAGUCHI Tatsuya KUNIKIYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 274-280
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
nonlocal impact ionizationsubstrate currentMonte Carlo simulationdevice simulationdrift-diffusion model
 Summary | Full Text:PDF

A New Wide Applicable Mobility Model for Device Simulation Taking Physics-Based Carrier Screening Effects into Account
Koichi FUKUDA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 281-287
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
device simulationmobilitycarrier screeningimpurity scatteringMOSFET
 Summary | Full Text:PDF

Comparison between a posteriori Error Indicators for Adaptive Mesh Generation in Semiconductor Device Simulation
Katsuhiko TANAKA Paolo CIAMPOLINI Anna PIERANTONI Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 214-219
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Numerics
Keyword: 
device simulationmesh generationerror indicators
 Summary | Full Text:PDF

A Unified Model for the Simulation of Small-Geometry Devices
Anna PIERANTONI Paolo CIAMPOLINI Andrea LIUZZO Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 139-147
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
TCADdevice simulationhot-electron effectselectro-thermal effects
 Summary | Full Text:PDF

Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation
Sumiko OSHIDA Masao TAGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11 ; pp. 1604-1610
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memories)
Category: DRAM
Keyword: 
soft errordevice simulation256 M-bit DRAM
 Summary | Full Text:PDF

Two-Dimensional Device Simulation of 0.1 µm Thin-Film SOI MOSFET's
Hans-Oliver JOACHIM Yasuo YAMAGUCHI Kiyoshi ISHIKAWA Norihiko KOTANI Tadashi NISHIMURA Katsuhiro TSUKAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1498-1505
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword: 
thin-film SOI MOSFET'sminiaturized devicesdevice simulation
 Summary | Full Text:PDF

A Parallel Algorithm for Solving Two Dimensional Device Simulation by Direct Solution Method and Its Evaluation on the AP 1000
Kazuhiro MOTEGI Shigeyoshi WATANABE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1992/07/25
Vol. E75-A  No. 7 ; pp. 920-922
Type of Manuscript:  Special Section LETTER (Special Section on the 1992 IEICE Spring Conference)
Category: 
Keyword: 
parallel schedulingparallel direct solution methoddevice simulation
 Summary | Full Text:PDF

General-Purpose Device Simulation System with an Effective Graphic Interface
Masaaki TOMIZAWA Akira YOSHII Shunji SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 226-233
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
device simulationgraphic-interfacemulti-windowsheterojunction-device
 Summary | Full Text:PDF

An Improved Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration
Naoyuki SHIGYO Noritoshi KONISHI Hideki SATAKE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 156-160
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
bandgap narrowingdevice simulationbipolar device
 Summary | Full Text:PDF

Three-Dimensional Evaluation of Substrate Current in Recessed-Oxide MOSFETs
Anna PIERANTONI Paolo CIAMPOLINI Antonio GNUDI Giorgio BACCARANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 181-188
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
TCADdevice simulationhot-electron effectsrecessed-oxide MOSFETs
 Summary | Full Text:PDF