Keyword : device model


Fabrication Technology and Electronical Characteristics of Pt/TiO2-x/TiO2/TiO2+x/Pt Nano-Film Memristor
Zhiyuan LI Qingkun LI Dianzhong WEN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5 ; pp. 475-481
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
memristorfabricationdevice modelswitching behavior
 Summary | Full Text:PDF(856.1KB)

Intra-Gate Length Biasing for Leakage Optimization in 45 nm Technology Node
Yesung KANG Youngmin KIM 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2013/05/01
Vol. E96-A  No. 5 ; pp. 947-952
Type of Manuscript:  PAPER
Category: VLSI Design Technology and CAD
Keyword: 
design for manufacturing (DFM)leakage savingnon-rectangular transistordevice modelTCADgate biasing
 Summary | Full Text:PDF(1.3MB)

Device Modeling Techniques for High-Frequency Circuits Design Using Bond-Based Design at over 100 GHz
Ryuichi FUJIMOTO Kyoya TAKANO Mizuki MOTOYOSHI Uroschanit YODPRASIT Minoru FUJISHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C  No. 4 ; pp. 589-597
Type of Manuscript:  Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category: 
Keyword: 
millimeter wavedevice modelMOSFETtransmission linepadbond-based design
 Summary | Full Text:PDF(2MB)

High-Frequency Device-Modeling Techniques for RF-CMOS Circuits
Ryuichi FUJIMOTO Osamu WATANABE Fumie FUJII Hideyuki KAWAKITA Hiroshi TANIMOTO 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2001/02/01
Vol. E84-A  No. 2 ; pp. 520-528
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques Supporting the System LSI Era)
Category: 
Keyword: 
device modelmodel parameterscalinggeometric parameterprocess parameter
 Summary | Full Text:PDF(1.2MB)