Keyword : defects


A New Critical Area Simulation Algorithm and Its Application for Failing Bit Analysis
Chizu MATSUMOTO Yuichi HAMAMURA Yoshiyuki TSUNODA Hiroshi UOZAKI Isao MIYAZAKI Shiro KAMOHARA Yoshiyuki KANEKO Kenji KANAMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/03/01
Vol. E94-C  No. 3 ; pp. 353-360
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
defectsfailure analysisfail bit signaturecritical area analysisintegrated circuit layout
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Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
Yasushi TAKANO Takuya OKAMOTO Tatsuya TAKAGI Shunro FUKE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12 ; pp. 1443-1448
Type of Manuscript:  Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Nanomaterials and Nanostructures
Keyword: 
defectsgrowth modelsGaP on Simetalorganic vapor phase epitaxysemiconducting III-V compounds
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Development of an Enterprise-Wide Yield Management System Using Critical Area Analysis for High-Product-Mix Semiconductor Manufacturing
Yuichi HAMAMURA Chizu MATSUMOTO Yoshiyuki TSUNODA Koji KAMODA Yoshio IWATA Kenji KANAMITSU Daisuke FUJIKI Fujihiko KOJIKA Hiromi FUJITA Yasuo NAKAGAWA Shun'ichi KANEKO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/01/01
Vol. E92-C  No. 1 ; pp. 144-152
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
defectsfailure analysisyield estimationintegrated circuit layoutsimulation
 Summary | Full Text:PDF

Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities
Hideki ONO Satoshi TANIGUCHI Toshi-kazu SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1020-1024
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: THz Devices
Keyword: 
impurity diffusioncurrent-enhanced diffusiondefectstunnel diodesmetamorphic devicesInGaAscarbon
 Summary | Full Text:PDF