Keyword : data retention


A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI
Fukashi MORISHITA Hideyuki NODA Isamu HAYASHI Takayuki GYOHTEN Mako OKAMOTO Takashi IPPOSHI Shigeto MAEGAWA Katsumi DOSAKA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 765-771
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Memory
Keyword: 
SOIcapacitorlessDRAMlow powerdata retention
 Summary | Full Text:PDF

A Rewritable CMOS-FUSE for System-on-Chip with a Differential Cell Architecture in a 0.13 µm CMOS Logic Process
Hiroyuki YAMAUCHI Yasuhiro AGATA Masanori SHIRAHAMA Toshiaki KAWASAKI Ryuji NISHIHARA Kazunari TAKAHASHI Hirohito KIKUKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10 ; pp. 1664-1672
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: CMOS Fuse
Keyword: 
nonvolatile memorydata retentionfuseCMOS compatible
 Summary | Full Text:PDF

A Long Data Retention SOI DRAM with the Body Refresh Function
Shigeki TOMISHIMA Fukashi MORISHITA Masaki TSUKUDE Tadato YAMAGATA Kazutami ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 899-904
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
memorySOI-DRAMbody regionrefreshdata retention
 Summary | Full Text:PDF

Plate Bumping Leakage Current Measurement Method and Its Application to Data Retention Characteristic Analysis for RJB DRAM Cells
Toru IWATA Hiroyuki YAMAUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C  No. 12 ; pp. 1707-1712
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category: 
Keyword: 
DRAMdata retentionmemory-cell leakage current
 Summary | Full Text:PDF

Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling
Seiichi ARITOME Riichiro SHIROTA Koji SAKUI Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1287-1295
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
flash EEPROMdata retentionendurancetunnel oxideelectron traps
 Summary | Full Text:PDF