Keyword : current-voltage characteristics


Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function
Hideaki SHIN-YA Michihiko SUHARA Naoya ASAOKA Mamoru NAOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1295-1301
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: THz Electronics
Keyword: 
resonant tunneling diodescurrent-voltage characteristicsthe Voigt functiondouble-barriertriple-barrierSPICE
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Scaling Limit of the MOS Transistor--A Ballistic MOSFET--
Kenji NATORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8 ; pp. 1029-1036
Type of Manuscript:  INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
ballistic MOSFETscaling limitcurrent-voltage characteristicsMOSFETinjection velocity
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A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode
Kenji NATORI Nobuyuki SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/09/25
Vol. E82-C  No. 9 ; pp. 1599-1606
Type of Manuscript:  Special Section PAPER (Special Issue on Integrated Electronics and New System Paradigms)
Category: Quantum Devices and Circuits
Keyword: 
single electron transistorSETresonant tunnelingcurrent-voltage characteristicsquantum dotcurrent map
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An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT)
Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 911-917
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SGTFD-SGTcurrent-voltage characteristicsthreshold voltageshort channel effect
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An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT)
Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 905-910
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SGTFD-SGTcurrent-voltage characteristicsthreshold voltage
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