Keyword : current-induced magnetization switching

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
Fumitaka IGA Masashi KAMIYANAGI Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 608-613
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
magnetic tunnel junction (MTJ)spin-transfer torque RAM (STT-RAM)tunnel magnetoresistance (TMR)magnetoresistive RAM (MRAM)current-induced magnetization switching
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