Keyword : current collapse


Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
Tadayoshi DEGUCHI Hideshi TOMITA Atsushi KAMADA Manabu ARAI Kimiyoshi YAMASAKI Takashi EGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1343-1347
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETscurrent collapsefield plateon-resistance
 Summary | Full Text:PDF

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
Hideyuki OKITA Toshiharu MARUI Shinichi HOSHI Masanori ITOH Fumihiko TODA Yoshiaki MORINO Isao TAMAI Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 686-690
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlGaN/GaN HEMTscurrent collapseSiNpassivation filmthermal CVD
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Investigation on Current Collapse of AlGaN/GaN HFET by Gate Bias Stress
Jin-Ping AO Yuya YAMAOKA Masaya OKADA Cheng-Yu HU Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1004-1008
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlGaN/GaNheterojunction field-effect transistorcurrent collapsegate bias stress
 Summary | Full Text:PDF

Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
Toshiharu MARUI Shinich HOSHI Masanori ITOH Isao TAMAI Fumihiko TODA Hideyuki OKITA Yoshiaki SANO Shohei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7 ; pp. 1009-1014
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
AlGaN/GaN HEMTsthermal CVD SiNcurrent collapsepassivation filmgate insulator
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Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs
Shinichi HOSHI Toshiharu MARUI Masanori ITOH Yoshiaki SANO Shouhei SEKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1052-1056
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN-HEMTscurrent collapseSi3N4 passivation filmNH3-plasma pretreatment
 Summary | Full Text:PDF

Dispersion Mechanisms in AlGaN/GaN HFETs
Sebastien NUTTINCK Edward GEBARA Stephane PINEL Joy LASKAR 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/08/01
Vol. E86-C  No. 8 ; pp. 1400-1408
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
Category: 
Keyword: 
AlGaN/GaN HFETtrapscurrent collapsefloating bodyself-heating
 Summary | Full Text:PDF