Keyword : class-F power amplifier

A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate
Hae-Chang JEONG Kyung-Whan YEOM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Vol. E95-C  No. 10 ; pp. 1580-1588
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
Selectively Anodized Aluminum Oxide substrateGallium-nitride (GaN) HEMTclass-F power amplifier
 Summary | Full Text:PDF(1.7MB)

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
Akihiro ANDO Yoichiro TAKAYAMA Tsuyoshi YOSHIDA Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/07/01
Vol. E94-C  No. 7 ; pp. 1193-1198
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
class-F power amplifierGaN HEMTdiode linearizerintermodulation distortiondiode bias control
 Summary | Full Text:PDF(1.7MB)