Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-CNo. 5 ;
pp. 699-704 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ReRAM, TiO2, low temperature, H2 annealing, charge trapping,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5 ;
pp. 962-967 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: HfSiOxNy, metal gate, leakage current, charge trapping, TDDB,
