Keyword : channel mobility


A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement
Han-Yu CHEN Kun-Ming CHEN Guo-Wei HUANG Chun-Yen CHANG Tiao-Yuan HUANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 726-732
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
threshold voltageeffective channel lengthchannel mobilityS-parameterautomatic measurement
 Summary | Full Text:PDF(532.5KB)

Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 1943-1948
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
silicon carbideSiO2/4H-SiC interfaceC-V characteristicsconductance methodchannel mobility
 Summary | Full Text:PDF(528.2KB)

Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK Andreas WETTSTEIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 385-390
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulationDGSOI MOSFETchannel mobilityquantum effectsSchrodinger-Poisson solver
 Summary | Full Text:PDF(460KB)