Keyword : carrier confinement


Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
Kenji SHIOJIMA Naoteru SHIGEKAWA Tetsuya SUEMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12 ; pp. 1968-1970
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
GaNHEMTburied p-layercarrier confinement
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