Keyword : carbon doping


AlGaAs High-Power Laser Diode with Window-Mirror Structure by Intermixing of Multi-Quantum Well for CD-R
Tetsuya YAGI Yoshihisa TASHIRO Shinji ABE Harumi NISHIGUCHI Yuji OHKURA Akihiro SHIMA Etsuji OMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/01/01
Vol. E85-C  No. 1 ; pp. 52-57
Type of Manuscript:  Special Section PAPER (Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
Category: 
Keyword: 
window-mirror structurehigh-power laser diodeintermixingimplantationcarbon doping
 Summary | Full Text:PDF(491.1KB)

Chemical Beam Epitaxy Grown Carbon-Doped Base InP/InGaAs Heterojunction Bipolar Transistor Technology for Millimeter-Wave Applications
Jong-In SONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/01/25
Vol. E83-C  No. 1 ; pp. 115-121
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
chemical beam epitaxycarbon dopingheterojunction bipolar transistormillimeter-wave transistor
 Summary | Full Text:PDF(635.4KB)

Fabrication of Small AlGaAs/GaAs HBT's for lntegrated Circuits Using New Bridged Base Electrode Technology
Takumi NITTONO Koichi NAGATA Yoshiki YAMAUCHI Takashi MAKIMURA Hiroshi ITO Osaake NAKAJIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9 ; pp. 1455-1463
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
heterojunction bipolar transistorself-aligned structureoxygen-ion implantationzinc diffusioncarbon doping
 Summary | Full Text:PDF(909.6KB)