Keyword : buried heterostructure


Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver
Kengo NOZAKI Shinji MATSUO Koji TAKEDA Takuro FUJII Masaaki ONO Abdul SHAKOOR Eiichi KURAMOCHI Masaya NOTOMI 
Publication:   
Publication Date: 2017/10/01
Vol. E100-C  No. 10 ; pp. 750-758
Type of Manuscript:  INVITED PAPER (Joint Special Section on Opto-electronics and Communications for Future Optical Network)
Category: 
Keyword: 
photonic crystal waveguidephotodetectorburied heterostructureoptical interconnection
 Summary | Full Text:PDF(4.8MB)

GaInAsP/InP Square Buried-Heterostructure Surface-Emitting Lasers Regrown by MOCVD
Seiji UCHIYAMA Susumu KASHIWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1311-1314
Type of Manuscript:  LETTER
Category: Opto-Electronics
Keyword: 
surface-emitting laserburied heterostructuremetalorganic chemical vapor depositionsquare mesa
 Summary | Full Text:PDF(403.7KB)

Vertical Cavity Surface-Emitting Laser Array for 1.3 µm Range Parallel Optical Fiber Transmissions
Toshihiko BABA Yukiaki YOGO Katsumasa SUZUKI Tomonobu KONDO Fumio KOYAMA Kenichi IGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/02/25
Vol. E78-C  No. 2 ; pp. 201-203
Type of Manuscript:  LETTER
Category: Opto-Electronics
Keyword: 
surface-emitting laserlaser arraysemiconductor laserburied heterostructureGaInAsP/InPoptical fiber communication
 Summary | Full Text:PDF(280.9KB)

First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
Toshihiko BABA Yukiaki YOGO Katsumasa SUZUKI Fimio KOYAMA Kenichi IGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1423-1424
Type of Manuscript:  LETTER
Category: Opto-Electronics
Keyword: 
surface emitting lasersemiconductor laserburied heterostructureGaInAsP/InPoptical fiber communication
 Summary | Full Text:PDF(123.7KB)

Static Characteristics of GaInAsP/InP Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes (GRIN-SCH QW LDs) Grown by Metalorganic Chemical Vapor Deposition (MOCVD)
Akihiko KASUKAWA Narihito MATSUMOTO Takeshi NAMEGAYA Yoshihiro IMAJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1541-1554
Type of Manuscript:  PAPER
Category: Opto-Electronics
Keyword: 
GRIN-SCH-MQWMOCVDGaInAsP/InPburied heterostructurelaser diodes
 Summary | Full Text:PDF(1.1MB)