Keyword : breakdown


Compact Modeling of Expansion Effects in LDMOS
Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11 ; pp. 1817-1823
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETsbreakdownhigh-electric-field phenomenacompact modelsurface potential
 Summary | Full Text:PDF(2.7MB)

Laser Breakdown 3D Display
Aleksandr CHEKHOVSKIY Yasutaka OHIRA Hiroshi TOSHIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/10/01
Vol. E91-C  No. 10 ; pp. 1616-1620
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
colorplasmalaserbreakdown3D display
 Summary | Full Text:PDF(623.4KB)

Non-Isothermal Device Simulation of Gate Switching and Drain Breakdown Characteristics of Si MOSFET in Transient State
Hirobumi KAWASHIMA Ryo DANG (or DAN) 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 894-899
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
device simulationnon-isothermalSi MOSFETtransient statebreakdown
 Summary | Full Text:PDF(497.8KB)