Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-CNo. 5 ;
pp. 676-682 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: millimeter-wave, GaAs, pHEMT, humidity, power density, breakdown voltage,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-CNo. 4 ;
pp. 672-677 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: HBT, gallium arsenide, ruggedness, breakdown voltage, linearity, composite collector, WCDMA,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/11/01 Vol. E86-CNo. 11 ;
pp. 2341-2345 Type of Manuscript: LETTER Category: Semiconductor Materials and Devices Keyword: standard CMOS processes, high voltage NMOS, breakdown voltage,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-CNo. 10 ;
pp. 2000-2003 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: double-recess, InP-passivation layer, HEMT, breakdown voltage,