Keyword : breakdown voltage


High Moisture Resistant and Reliable Gate Structure Design in High Power pHEMTs for Millimeter-Wave Applications
Hirotaka AMASUGA Toshihiko SHIGA Masahiro TOTSUKA Seiki GOTO Akira INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 676-682
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
millimeter-waveGaAspHEMThumiditypower densitybreakdown voltage
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Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers
Takaki NIWA Takashi ISHIGAKI Naoto KUROSAWA Hidenori SHIMAWAKI Shinichi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 672-677
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
HBTgallium arsenideruggednessbreakdown voltagelinearitycomposite collectorWCDMA
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A 30 V High Voltage NMOS Structure Design in Standard 5 V CMOS Processes
Tzu-Chao LIN Jiin-Chuan WU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/11/01
Vol. E86-C  No. 11 ; pp. 2341-2345
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
standard CMOS processeshigh voltage NMOSbreakdown voltage
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Double-Recess Structure with an InP Passivation Layer for 0.1-µm-Gate InP HEMTs
Hiroto KITABAYASHI Suehiro SUGITANI Yoshino K. FUKAI Yasuro YAMANE Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2000-2003
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
double-recessInP-passivation layerHEMTbreakdown voltage
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