Keyword : boron penetration


Analysis of Boron Penetration and Gate Depletion Using Dual-Gate PMOSFETs for High Performance G-Bit DRAM Design
Norikatsu TAKAURA Ryo NAGAI Hisao ASAKURA Satoru YAMADA Shin'ichiro KIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1138-1145
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
boron penetrationgate depletiondual-gate PMOSFETsVth fluctuationG-bit DRAM
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Boron Penetration and Hot-Carrier Effects in Surface-Channel PMOSFETs with p+ Poly-Si Gates
Tohru MOGAMI Lars E. G. JOHANSSON Isami SAKAI Masao FUKUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3 ; pp. 255-260
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
hot-carrier effectsboron penetrationsurface-channel PMOSFETsgate currentBF2
 Summary | Full Text:PDF