Keyword : bonded SOI


A Bipolar-Based 0.5 µm BiCMOS Technology on Bonded SOI for High-Speed LSIs
Makoto YOSHIDA Toshiro HIRAMOTO Tsuyoshi FUJIWARA Takashi HASHIMOTO Tetsuya MURAYA Shigeharu MURATA Kunihiko WATANABE Nobuo TAMBA Takahide IKEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1395-1403
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: General Technology
Keyword: 
BiCMOSbonded SOIdouble polysilicon bipolartrench isolationstress
 Summary | Full Text:PDF

A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI Tetsu FUKANO Atsushi FUKURODA Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1453-1458
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOIlateral bipolarsidewall self-aligning baseBiCMOSrecrystallization
 Summary | Full Text:PDF

High-Temperature Operation of nMOSFET on Bonded SOI
Yoshihiro ARIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1442-1446
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOISOI-MOSFETpulse-field-assisted bondingleakagehigh-temperature operation
 Summary | Full Text:PDF