IEICE Trans

Keyword : bipolar transistor

Amplified Redox Sensor for Highly Sensitive Chemical Analysis Sou TAKAHASHI Masato FUTAGAWA Makoto ISHIDA Kazuaki SAWADA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/01/01 Vol. E99-C No. 1 ; pp. 95-99 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: redox sensor, bipolar transistor, amperometric sensors, chemical analysis,
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Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance Masao KONDO Isao MIYASHITA Tadashi KURAMAOTO Makoto KOSHIMIZU Katsuyoshi WASHIO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/04/01 Vol. E89-C No. 4 ; pp. 455-465 Type of Manuscript: Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones) Category: Keyword: bipolar transistor, SiGe HBT, SiGe:C, power amplifier, ACPR, PAE,
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Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops Eiichi SANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/09/01 Vol. E86-C No. 9 ; pp. 1879-1885 Type of Manuscript: PAPER Category: Electronic Circuits Keyword: bipolar transistor, HBT, HEMT, digital circuit, propagation delay, flip-flop,
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Tunneling at the Emitter Periphery in Silicon-Germanium HBTs Sean P. McALISTER Craig STOREY Stephen J. KOVACIC Hugues LAFONTAINE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1431-1436 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: SiGe HBTs & FETs Keyword: silicon-germanium, bipolar transistor, tunneling,
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Low V_be GaInAsN Base Heterojunction Bipolar Transistors Roger E. WELSER Paul M. DELUCA Alexander C. WANG Noren PAN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1389-1393 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: III-V HBTs Keyword: InGaP/GaAs HBT, AlGaAs/GaAs HBT, GaInNAs, bipolar transistor, turn-on voltage,
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New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure Yoichi TAMAKI Takashi HASHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/04/25 Vol. E82-C No. 4 ; pp. 612-617 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Keyword: isolation capacitance, SOI, bipolar transistor, trench structure,
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Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1999/03/25 Vol. E82-C No. 3 ; pp. 526-530 Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology) Category: Silicon Devices Keyword: bipolar transistor, SiGe HBT, doping level inversion, cutoff frequency, selective epitaxy,
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7-Mask Self-Aligned SiGe Base Bipolar Transistors with f_T of 80 GHz Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/05/25 Vol. E80-C No. 5 ; pp. 707-713 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: bipolar transistor, silicon-germanium base, selective epitaxial growth, CMP, trench isolation, f_T,
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An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation Tsutomu TASHIRO Mitsuhiro SUGIYAMA Hisashi TAKEMURA Chihiro OGAWA Masakazu KURISU Hideki KITAHATA Takenori MORIKAWA Masahiko NAKAMAE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/12/25 Vol. E79-C No. 12 ; pp. 1733-1740 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: bipolar transistor, self-aligned, cutoff frequency, maximum frequency of oscillation, CVD BSG, device design,
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Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer Yoshiroh TSUBOI Claudio FIFGNA Enrico SANGIORGI Bruno RICCÒ Tetsunori WADA Yasuhiro KATSUMATA Hiroshi IWAI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-C No. 2 ; pp. 174-178 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Device Simulation Keyword: bipolar transistor, i-layer, collector signal delay, velocity overshoot,
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Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET) Tomomi YOSHIMOTO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/01/25 Vol. E77-C No. 1 ; pp. 63-68 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: Si MIS TET, bipolar transistor, inversion base layer, tunnel, low temperature,
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Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications Norio GOTO Nobuyuki HAYAMA Hideki TAKAHASHI Kazuhiko HONJO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/09/25 Vol. E76-C No. 9 ; pp. 1367-1372 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Electron Devices) Category: Keyword: bipolar transistor, heterojunction, power amplifier, digital mobile communication, power efficiency,
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High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology Hirokazu FUJIMAKI Kenichi SUZUKI Yoshio UMEMURA Koji AKAHANE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/04/25 Vol. E76-C No. 4 ; pp. 577-581 Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies) Category: Device Technology Keyword: intergrated electronics, bipolar transistor, LSI, selective epitaxy, self-alignment, SIC,
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