Keyword : bipolar transistor


Amplified Redox Sensor for Highly Sensitive Chemical Analysis
Sou TAKAHASHI Masato FUTAGAWA Makoto ISHIDA Kazuaki SAWADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/01/01
Vol. E99-C  No. 1 ; pp. 95-99
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
redox sensorbipolar transistoramperometric sensorschemical analysis
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Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
Masao KONDO Isao MIYASHITA Tadashi KURAMAOTO Makoto KOSHIMIZU Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4 ; pp. 455-465
Type of Manuscript:  Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
bipolar transistorSiGe HBTSiGe:Cpower amplifierACPRPAE
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Analytical Expressions for Maximum Operating Frequencies of Emitter-Coupled Logic and Source-Coupled FET Logic Toggle Flip-Flops
Eiichi SANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/09/01
Vol. E86-C  No. 9 ; pp. 1879-1885
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
bipolar transistorHBTHEMTdigital circuitpropagation delayflip-flop
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Tunneling at the Emitter Periphery in Silicon-Germanium HBTs
Sean P. McALISTER Craig STOREY Stephen J. KOVACIC Hugues LAFONTAINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1431-1436
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: SiGe HBTs & FETs
Keyword: 
silicon-germaniumbipolar transistortunneling
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Low Vbe GaInAsN Base Heterojunction Bipolar Transistors
Roger E. WELSER Paul M. DELUCA Alexander C. WANG Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1389-1393
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBTAlGaAs/GaAs HBTGaInNAsbipolar transistorturn-on voltage
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New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure
Yoichi TAMAKI Takashi HASHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4 ; pp. 612-617
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
isolation capacitanceSOIbipolar transistortrench structure
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Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3 ; pp. 526-530
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
bipolar transistorSiGe HBTdoping level inversioncutoff frequencyselective epitaxy
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7-Mask Self-Aligned SiGe Base Bipolar Transistors with fT of 80 GHz
Tsutomu TASHIRO Takasuke HASHIMOTO Fumihiko SATO Yoshihiro HAYASHI Toru TATSUMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/05/25
Vol. E80-C  No. 5 ; pp. 707-713
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
bipolar transistorsilicon-germanium baseselective epitaxial growthCMPtrench isolationfT
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An Advanced BSG Self-Aligned (A-BSA) Transistor Technology for High Speed IC Implementation
Tsutomu TASHIRO Mitsuhiro SUGIYAMA Hisashi TAKEMURA Chihiro OGAWA Masakazu KURISU Hideki KITAHATA Takenori MORIKAWA Masahiko NAKAMAE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C  No. 12 ; pp. 1733-1740
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
bipolar transistorself-alignedcutoff frequencymaximum frequency of oscillationCVD BSGdevice design
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Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer
Yoshiroh TSUBOI Claudio FIFGNA Enrico SANGIORGI Bruno RICCÒ Tetsunori WADA Yasuhiro KATSUMATA Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 174-178
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
bipolar transistori-layercollector signal delayvelocity overshoot
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Electrical Properties of Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
Tomomi YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/01/25
Vol. E77-C  No. 1 ; pp. 63-68
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
Si MIS TETbipolar transistorinversion base layertunnellow temperature
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Application of AlGaAs/GaAs HBT's to Power Devices for Digital Mobile Radio Communications
Norio GOTO Nobuyuki HAYAMA Hideki TAKAHASHI Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9 ; pp. 1367-1372
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
bipolar transistorheterojunctionpower amplifierdigital mobile communicationpower efficiency
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High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology
Hirokazu FUJIMAKI Kenichi SUZUKI Yoshio UMEMURA Koji AKAHANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4 ; pp. 577-581
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
intergrated electronicsbipolar transistorLSIselective epitaxyself-alignmentSIC
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