Keyword : base-collector capacitance


Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
Yutaro YAMAGUCHI Takeshi SAGAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1323-1326
Type of Manuscript:  BRIEF PAPER
Category: III-V High-Speed Devices and Circuits
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancetransferred-substrateheterogeneous integration
 Summary | Full Text:PDF(619.5KB)

Reduction of Base-Collector Capacitance in InP/InGaAs DHBT with Buried SiO2 Wires
Naoaki TAKEBE Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 917-920
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
heterojunction bipolar transistorInPbase-collector capacitancein situ etching
 Summary | Full Text:PDF(571.1KB)

Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies
Masato SEKI Ryo ISHIKAWA Kazuhiko HONJO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 937-942
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: High-Speed HBTs and ICs
Keyword: 
microwaveclass-F amplifierInGaP/GaAs HBThigh-efficiencyPAEbase-collector capacitance
 Summary | Full Text:PDF(872.7KB)