Keyword : back-source


Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with Back-Source Electrode
Atsushi KATO Toru KANAZAWA Shunsuke IKEDA Yoshiharu YONAI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 904-909
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
back-sourceMOSFETInGaAsBCBbonding
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