IEICE Trans

Keyword : atomic layer deposition

Room Temperature Atomic Layer Deposition of Nano Crystalline ZnO and Its Application for Flexible Electronics Kazuki YOSHIDA Kentaro SAITO Keito SOGAI Masanori MIURA Kensaku KANOMATA Bashir AHMMAD Shigeru KUBOTA Fumihiko HIROSE
Publication: Publication Date: 2021/07/01 Vol. E104-C No. 7 ; pp. 363-369 Type of Manuscript: PAPER Category: Electronic Materials Keyword: room temperature process, atomic layer deposition, crystallization, ZnO,
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Interaction of Bis-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO₂ Thin-Film Growth Using Density Functional Theory Seung-Bin BAEK Dae-Hee KIM Yeong-Cheol KIM
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 ; pp. 771-774 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: atomic layer deposition, Bis-diethylaminosilane, density functional theory, SiO₂,
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Effect of Purge Time on the Properties of HfO₂ Films Prepared by Atomic Layer Deposition Takaaki KAWAHARA Kazuyoshi TORII
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 ; pp. 2-8 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: CMOSFET, high-κ gate dielectric, HfO₂, atomic layer deposition, long purge, impurity, gate leakage current,
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