Keyword : antimony


Ultra-Shallow Junction Formation with Antimony Implantation
Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1091-1097
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
shallow junctionantimonydopant lossdopant pile-upsheet resistance
 Summary | Full Text:PDF(714.3KB)

Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures
Peter PICHLER Rainer SCHORK Thomas KLAUSER Heiner RYSSEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/02/25
Vol. E75-C  No. 2 ; pp. 128-137
Type of Manuscript:  Special Section PAPER (Special Issue on Selected Papers from '91 VPAD)
Category: 
Keyword: 
boronantimonydiffusionpoint defectsimplantation enhancement
 Summary | Full Text:PDF(750.4KB)