IEICE Trans

Keyword : XPS

Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia P. Pungboon PANSILA Kensaku KANOMATA Bashir AHMMAD Shigeru KUBOTA Fumihiko HIROSE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-C No. 5 ; pp. 395-401 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Plasma, plasma excited NH₃, IR absorption spectroscopy, XPS,
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Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment Takuma NAKANO Masamichi AKAZAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 ; pp. 686-689 Type of Manuscript: BRIEF PAPER Category: Keyword: InAlN, XPS, surface treatment, HF, native oxide,
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Study on Surface Characteristic of the Copper Nitride Films by Absorbed Oxygen Musun KWAK Jongho JEON Kyoungri KIM Yoonseon YI Sangjin AN Donsik CHOI Youngseok CHOI Kyongdeuk JEONG
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/11/01 Vol. E95-C No. 11 ; pp. 1744-1748 Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays) Category: Keyword: copper nitride, weak boundary layer, oxygen, atmospheric pressure plasma, excimer ultraviolet, XPS, AFM,
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Characterization of HfO₂ Films Prepared on Various Surfaces for Gate Dielectrics Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 ; pp. 17-23 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ gate dielectrics, HfO₂, ALD, TEM, SIMS, XPS, FT-IR ATR, EXAFS,
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Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer Hiroshi TAKAHASHI Masatsugu YAMADA Yong-Gui XIE Seiya KASAI Hideki HASEGAWA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/10/01 Vol. E84-C No. 10 ; pp. 1344-1349 Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: InP, MISFET, XPS, C-V,
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Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics Akitaka MURATA Morio NAKAMURA Akira ASAI Ichiro TANIGUCHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 ; pp. 990-994 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: XPS, I-V characteristics, RIE with CF₄ gas, surface damage, SiF₃, CDE with NF₃ gas,
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Initial Stage of SiO₂/Si Interface Formation on Si(111) Surface Hiroshi NOHIRA Yoshinari TAMURA Hiroki OGAWA Takeo HATTORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 757-763 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: oxidation, silicon, H-termination, XPS,
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Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces Hiroki OGAWA Takeo HATTORI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 774-780 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: chemical structure, silicon, native oxide, H-termination, XPS,
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Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces Tatsuhiro YASAKA Masaru TAKAKURA Kenichi SAWARA Shigeo UENAGA Hiroshi YASUTAKE Seiichi MIYAZAKI Masataka HIROSE
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/07/25 Vol. E75-C No. 7 ; pp. 764-769 Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology) Category: Keyword: HF-treated Si, hydrogen termination, layer-by-layer oxidation, XPS, FT-IR-ATR,
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