Keyword : XPS


Nitrogen Adsorption of Si(100) Surface by Plasma Excited Ammonia
P. Pungboon PANSILA Kensaku KANOMATA Bashir AHMMAD Shigeru KUBOTA Fumihiko HIROSE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5 ; pp. 395-401
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Plasmaplasma excited NH3IR absorption spectroscopyXPS
 Summary | Full Text:PDF

Native Oxide Removal from InAlN Surfaces by Hydrofluoric Acid Based Treatment
Takuma NAKANO Masamichi AKAZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 686-689
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
InAlNXPSsurface treatmentHFnative oxide
 Summary | Full Text:PDF

Study on Surface Characteristic of the Copper Nitride Films by Absorbed Oxygen
Musun KWAK Jongho JEON Kyoungri KIM Yoonseon YI Sangjin AN Donsik CHOI Youngseok CHOI Kyongdeuk JEONG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11 ; pp. 1744-1748
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
copper nitrideweak boundary layeroxygenatmospheric pressure plasmaexcimer ultravioletXPSAFM
 Summary | Full Text:PDF

Characterization of HfO2 Films Prepared on Various Surfaces for Gate Dielectrics
Takashi YAMAMOTO Yukiko IZUMI Naoyuki SUGIYAMA Kazuhiro YOSHIKAWA Hideki HASHIMOTO Yoshihiro SUGITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 17-23
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κ gate dielectricsHfO2ALDTEMSIMSXPSFT-IR ATREXAFS
 Summary | Full Text:PDF

Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer
Hiroshi TAKAHASHI Masatsugu YAMADA Yong-Gui XIE Seiya KASAI Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1344-1349
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InPMISFETXPSC-V
 Summary | Full Text:PDF

Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics
Akitaka MURATA Morio NAKAMURA Akira ASAI Ichiro TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 990-994
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
XPSI-V characteristicsRIE with CF4 gassurface damageSiF3CDE with NF3 gas
 Summary | Full Text:PDF

Initial Stage of SiO2/Si Interface Formation on Si(111) Surface
Hiroshi NOHIRA Yoshinari TAMURA Hiroki OGAWA Takeo HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 757-763
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
oxidationsiliconH-terminationXPS
 Summary | Full Text:PDF

Chemical Structures of Native Oxides Formed during Wet Chemical Treatments of Silicon Surfaces
Hiroki OGAWA Takeo HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 774-780
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
chemical structuresiliconnative oxideH-terminationXPS
 Summary | Full Text:PDF

Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces
Tatsuhiro YASAKA Masaru TAKAKURA Kenichi SAWARA Shigeo UENAGA Hiroshi YASUTAKE Seiichi MIYAZAKI Masataka HIROSE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7 ; pp. 764-769
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
HF-treated Sihydrogen terminationlayer-by-layer oxidationXPSFT-IR-ATR
 Summary | Full Text:PDF