Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-CNo. 10 ;
pp. 2082-2084 Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: TlGaAs, molecular-beam epitaxy, X-ray diffraction, quantum well,
Effect of SiF4/SiH4/H2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition Mikio MOHRIHiroaki KAKINUMATaiji TSURUOKA